Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

A photoluminescence study of δ-doped GaAs

Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...

Electron mobility in Si delta doped GaAs

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Electronic Structure of Fibonacci Si Δ-doped Gaas Typeset Using Revt E X 1

We study the electronic structure of a new type of Fibonacci superlattice based on Si δ-doped GaAs. Assuming that δ-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to δ-doping is obtained by means of the Thomas-Fermi appr...

Gallium Oxide And Gadolinium Gallium Oxide Insulators On Si δ-Doped GaAs / AlGaAs Heterostructures

New photoluminescence lines in Vanadium doped GaAs grown by MOVPE

We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in t...